qs043-402-2/5 00 ???`? ? ? ? dimension:mm pmb75e6 pmb75e6c ????g?R ollector-mitter oltage ` ? g R ate-mitter oltage ollector urrent p ? ollector ower issipation unction emperature ange torage emperature ange ~ F R(erminal to ase ,inute) solation oltage , odule ase to eatsink . . ounting orque usbar to ain erminal pmb75e6 . . pdmb75e6 ? (kgf?cm) . . . ollector-mitter ut-ff urrent = 600v, = 0v . ` ? ate-mitter eakage urrent = 20v, = 0v . ? ????g??R ollector-mitter aturation oltage = 75a, = 15v . . ` R ate-mitter hreshold oltage h = 5v, = 75ma . . nput apacitance = 10v, = 0v,= 1mh 3,200 N r g ise ime . . `??rg urn-on ime . . r g all ime . . ???rg witching ime `???rg urn-off ime = 300v = 4.0 = 12 = 15v . . ? ?`?`??`? orward urrent . . . R eak orward oltage = 75a, = 0v . . r g everse ecovery ime = 75a, = -10v i/t= 150a/s . . ? . . . . hermal mpedance iode th(j-c) junction to case tcy?? . 4-?5.5 19.5 19.5 17.5 10 10 10 10 10 4 . 5 4 . 5 4 . 5 4 . 5 4 . 5 4 . 5 label 94 80 7-m4 86 74 12-f ast en tab #110 1 2 3 4 56 7 8 8 9 10 11 12 13 14 15 16 17 18 19 18.5 18.5 18.5 18.5 34 17.5 25.5 7 118. 11 15.50 119. 60 17. 00 7.00 13. 00 20.50 label 8 9 12 13 10 11 14 15 1 3 56 16 17 18 19 7 4 2 1 2 5 6 3 4 7 8 21 20 19 17 9 10 11 12 15 14 13 pmb75e6 pmb75e6c 39.00 3. 81 19. 05 12.62 4 19. 05= 76.20 94.50 99. 00 3.81 8.01 15.24 110.00 121. 50 4 ? 5.50 cl 4 ? 2.10 12.62 1 2 3 4 56 57. 50 7 8910 11 12 13 14 15 16 17 18 19 20 21 3. 81 cl 19. 05 40. 20 50.00 58. 42 61.50
qs043-402-3/5 00 ???`? ? ? 012345 0 25 50 75 100 125 150 collector to emitter voltage v ce (v) collector current i c (a) fig.1 - output characteristics (typical) t c =25c 11v 10v v ge =20v 9v 8v 12v 15v 012345 0 25 50 75 100 125 150 collector to emitter voltage v ce (v) collector current i c (a) fig.2 - output characteristics (typical) t c =125c 11v 10v v ge =20v 9v 8v 12v 15v 0 4 8 121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.3 - collector to emitter on voltage vs. gate to emitter voltage (typical) t c =25c i c =30a 150a 75a 048121620 0 2 4 6 8 10 12 14 16 gate to emitter voltage v ge (v) collector to emitter voltage v ce (v) fig.4 - collector to emitter on voltage vs. gate to emitter voltage (typical) i c =30a 150a t c =125c 75a 0 50 100 150 200 250 300 0 50 100 150 200 250 300 350 400 total gate charge qg (nc) collector to emitter voltage v ce (v) gate to emitter voltage v ge (v) fig.5 - gate charge vs. collector to emitter voltage (typical) 0 2 4 6 8 10 12 14 16 v ce =300v 200v 100v r l =4.0 ( t c =25c 0.1 0.2 0.5 1 2 5 10 20 50 100 200 100 300 1000 3000 10000 30000 collector to emitter voltage v ce (v) capacitance c (pf) fig.6 - capacitance vs. collector to emitter voltage (typical) cies coes cres v ge =0v f=1mh z t c =25c
qs043-402-4/5 00 ???`? ? ? 0 50 100 150 0 0.2 0.4 0.6 0.8 1 collector current i c (a) switching time t (s) fig.7 - collector current vs. switching time (typical) t off t f t r(v ce ) t on v cc =300v r g =12 ( v ge =15v t c =25c resistive load 10 30 100 300 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.8 - series gate impedance vs. switching time (typical) v cc =300v i c =75a v ge =15v t c =25c resistive load tf tr (v ce ) ton toff 10 30 100 300 0.02 0.05 0.1 0.2 0.5 1 2 5 10 series gate impedance r g ( ( ) switching time t (s) fig.10 - series gate impedance vs. switching time v cc =300v i c =75a v ge =15v t c =125c inductive load tf tr (i c ) ton toff 0 25 50 75 100 125 150 0 2 4 6 8 collector current i c (a) switching loss e sw (mj/pulse) fig.11 - collector current vs. switching loss e off e on v cc =300v r g =12 ( v ge =15v t c =125c inductive load e rr 10 30 100 300 0.3 1 3 10 30 100 series gate impedance r g ( ( ) switching loss e sw (mj/pulse) fig.12 - series gate impedance vs. switching loss e off e on v cc =300v i c =75a v ge =15v t c =125c inductive load e rr 0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 collector current i c (a) switching time t (s) fig.9 - collector current vs. switching time t off t f t r(ic) t on v cc =300v r g =12 ( v ge =15v t c =125c inductive load
qs043-402-5/5 00 ???`? ? ? 01234 0 25 50 75 100 125 150 forward voltage v f (v) forward current i f (a) fig.13 - forward characteristics of free wheeling diode (typical) t c =25c t c =125c 0 75 150 225 300 375 450 2 5 10 20 50 100 200 500 1000 -di/dt (a/s) peak reverse recovery current i rrm (a) reverse recovery time trr (ns) fig.14 - reverse recovery characteristics (typical) i rrm trr i f =75a t c =25c t c =125c 10 -5 10 -4 10 -3 10 -2 10 -1 110 1 3x10 -3 1x10 -2 3x10 -2 1x10 -1 3x10 -1 1 3 1x10 1 time t (s) transient thermal impedance rth (j-c) (c/w) fig.16 - transient thermal impedance t c =25c 1 shot pulse frd igbt 0 200 400 600 800 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 collector to emitter voltage v ce (v) collector current i c (a) fig.15 - reverse bias safe operating area r g =12 ( , v ge =15v, t c < 125c
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